Deformations related to atom mixing in Si/SiO2/Si nanopillars under high-fluence broad-beam irradiation

نویسندگان

چکیده

Structures consisting of a single Si nanodot buried within an insulating nanometric ${\mathrm{SiO}}_{2}$ layer stacked between two layers show promising properties for room temperature operational single-electron transistors. Moreover, such structures are highly compatible with modern complementary metal-oxide semiconductor technologies. Metastable ${\mathrm{SiO}}_{\mathrm{x}}$ phase separates into and insulating, homogeneous during annealing, providing solid path towards the desired structure. However, achieving necessary amount excessive Si, dissolved in correct concentrations ${\mathrm{SiO}}_{\mathrm{x}}$, remains technological challenge. In this work, we investigate ion-induced atom mixing pre-built $\mathrm{Si}/{\mathrm{SiO}}_{2}/\mathrm{Si}$ nanopillars, which is considered to be technologically way produce spatially confined controlled manner. During high-fluence ion irradiation, notice significant shortening nanopillar preferential loss O atoms. Both sputtering nanoscale hammering found cause deformation. The ion-hammering effect on explained by multiple small displacements, strongly enhanced after was rendered completely amorphous. methods presented here can used determine ion-fluence threshold sufficient regions before large structural deformations formed.

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ژورنال

عنوان ژورنال: Physical Review Materials

سال: 2021

ISSN: ['2476-0455', '2475-9953']

DOI: https://doi.org/10.1103/physrevmaterials.5.083606